| UV-CTcP 产品型号（ITEM）：AGC-1
名称：UV- CTcP Plate
一) 版基工艺条件：
1)版基砂目Ra≤0.60，同版差不大于0.05。
2)氧化膜2.2～2.5克/m2，均匀坚硬致密。采用低温低浓度氧化工艺可形成坚硬致密的氧化膜
3)新水
二) 制版性能检测：
| CTcP machine Exposure |
Luscher X-Pose 160 |
Cron UVP-46 |
Basys print UV-Setter 710 |
| Wavelength |
405nm |
405nm |
360～450nm |
| Energy |
50～60mw |
50～60mw |
|
| Scan |
600～900 turns |
700～9000 turns |
|
| Scan speed (for 1030x800 Plate) |
≈ piece/2 min |
≈ piece/2 min |
≈ piece/3min |
| Plate making pieces/hour |
＞30 pieces |
＞20 pieces |
＞20 pieces |
Develop:
Fujifilm，DP-4 (Japan)
1:3~1:4 /23℃~ 25℃ |
20~30sec |
20~30sec |
20~30sec |
| Dot reproduce |
2% / 98% |
2% / 98% |
2% / 98% |
2) Latitude of developing: (testing PS plate after Normal Exposure)
Long time development :?
Fuji, DP-4(Japan) 1:7? 25℃ / 120sec; interim steps 5~11, after 11 remained.
Stronger development:??
Fuji, DP-4 (Japan) 1:4? 25℃ / 30sec; interim steps 6~11, after 11 remained.
Weakly development:???
Fuji, DP-4 (Japan)? 1:15 (or 2.5% Na2SiO3·9HO2 ) 25℃ / 30sec; 1 step clear.
3) Latitude of Exposure:
In one plate, sequent in different exposure dosage on 100 mJ/cm2; 140 mJ/cm2 ;
200 mJ/cm2;? then the plate in normal development:
When on 100 mJ/cm2 exposure, 3 step should be cleared.
On 200 mJ/cm2 exposure, 4 steps should be cleared, dot reproduce 3% remained.
4) Alkali resistance ?(the method of weight lost)
Use the solution of 3% Na2SiO3·9HO2 and 0.4% NaOH,/ 25℃ / 120sec，
(Rate of layer remained)≥93%
5)Stronger development-proof??
Fuji, DP-4 (Japan) 1:4 (or 8% Na2SiO3·9HO2 ) 25℃ / 40sec; the ratio of layer remain≥93%.
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